| 摘要 |
PROBLEM TO BE SOLVED: To provide: a metal nitride material for a thermistor which can be directly grown on a film or the like without a baking process, has high heat resistance, and achieves high reliability; a method for manufacturing such a metal nitride material; and a film-type thermistor sensor.SOLUTION: A metal nitride material used for a thermistor comprises a metal nitride expressed by the general formula, M(AlSi)N(where M represents at least one of Ti, V, Cr, Mn, Fe and Co; 0.0<w<0.3; 0.70≤y/(x+y)≤0.98; 0.4≤z≤0.5; and x+y+z=1), of which the crystalline structure includes a hexagonal wurtzite type single phase. A method for manufacturing the metal nitride material for a thermistor comprises a film formation step for growing a film by performing a reactive sputtering on an M-Al-Si alloy sputtering target (where M represents at least one of Ti, V, Cr, Mn, Fe and Co) in an atmosphere containing nitrogen. |
