| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of providing a stable electric property and high reliability to the semiconductor device using an oxide semiconductor.SOLUTION: In steps for manufacturing a bottom-gate structure transistor having an oxide semiconductor film, dehydration or dehydrogenation treatment by heat treatment, and oxygen doping treatment are performed. The transistor having a gate insulating film treated by oxide doping treatment and the oxide semiconductor film treated by dehydration or dehydrogenation treatment by heat treatment, can reduce the amount of change of a threshold voltage of the transistor even before and after a bias-thermal stress test(BT test), and have high reliability. |
