| 摘要 |
In a reflector including an AlGaN layer (1), an InGaN layer (2), and a GaN layer (3) placed therebetween, high reflectivity and a wide reflection band are achieved. A reflector includes a substrate (10) containing GaN; first layers (1) containing AlxGa1-xN; second layers (2) containing InyGal-yN; and a third layer (3) containing GaN, the first, second, and third layers being stacked on the substrate. The first (1) and second (2) layers are alternately stacked, the third layer (3) is placed between one of the first layers and one of the second layers, x and y satisfies a specific formula, the first layers (1) have a thickness less than the thickness of the second layers (2), and the second layers (2) have an optical thickness of λ/8 to 3X/8, where λ is the central wavelength of the reflection band of the reflector. |
