| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a light-emitting device that allows changing its wavelength by a small amount of change.SOLUTION: A light-emitting device 100 according to the present invention includes: a first-conductivity-type first semiconductor multilayer film mirror 20; a second-conductivity-type second semiconductor multilayer film mirror 22; an active layer 40 formed between the first semiconductor multilayer film mirror 20 and the second semiconductor multilayer film mirror 22; a semi-insulating-type third semiconductor multilayer film mirror 24 formed between the first semiconductor multilayer film mirror 20 and the active layer 40; a first-conductivity-type contact layer 30 formed between the third semiconductor multilayer film mirror 24 and the active layer 40; a first electrode 60 electrically connected to the first semiconductor multilayer film mirror 20; a second electrode 62 electrically connected to the second semiconductor multilayer film mirror 22; and a third electrode 64 in ohmic contact with the contact layer 30. The third semiconductor multilayer film mirror 24 is composed of a material having band gap energy larger than the energy of light generated in the active layer 40.</p> |
