NITRIDE SEMICONDUCTOR DEVICE, DIODE AND FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To achieve a nitride semiconductor device which achieves high withstand voltage, further reduction in current collapse and further reduction in leakage current.SOLUTION: A nitride semiconductor device comprises: a substrate 11; a buffer layer 12; an electron transit layer 13; and an electron supply layer 14 on which a two-dimensional electron gas concentration control layer 15, an insulation film 16, an anode electrode 17 having field plate parts 17a, 17b and a cathode electrode 18 are provided. A 2DEG concentration is modulated by the two-dimensional gas control layer 15 from a high-concentration region A to a low-concentration region a across modulation points P, P. The modulation point Plies along a principal surface of the substrate and in a region below the anode electrode 17, and a field intensity between the modulation point Pand an end of the field plate part 17b on the cathode electrode 18 side is made smaller than a field intensity on at least one of the modulation point Pand the end of the field plate part 17b on the cathode electrode 18 side.