| 摘要 |
PROBLEM TO BE SOLVED: To further reduce the height of a solid-state imaging element.SOLUTION: The solid-state imaging element includes: a semiconductor substrate in which a photodiode is formed for each pixel; a light-shielding film which is laminated on a light irradiation surface, which is irradiated with light, of the semiconductor substrate and is formed so that at least a portion where the photodiode is arranged is opened; and a photoelectric conversion film which is laminated so as to cover the light irradiation surface of the semiconductor substrate and the light-shielding film and absorbs light to generate an electric charge. The photoelectric conversion film is composed of a material having a light absorption rate higher than that of the semiconductor substrate. This technology is applicable, for example, to a CMOS image sensor. |
