| 摘要 |
PROBLEM TO BE SOLVED: To provide an inductively-coupled plasma CVD apparatus capable of forming a thin film at excellent productivity.SOLUTION: An inductively-coupled plasma CVD apparatus comprises: a vacuum chamber having a dielectric window which allows high frequency to pass through the window; a sheet conveyance part which feeds sheet from a feeding roller, and takes up the sheet by a take-up roller after a surface of the sheet is positioned in a film deposition zone inside the vacuum chamber; a raw material gas supply part which supplies raw material gas into the film deposition zone; a high frequency applying part which applies high frequency to the raw material gas supplied to the film deposition zone via the dielectric window to generate inductively-coupled plasma of the raw material gas, and forms a thin film on a surface of the sheet positioned in the film deposition zone; and a contamination preventing member which is positioned in the vicinity of a surface of the dielectric window, which faces the film deposition zone, and suppresses contact between the inductively-coupled plasma generated in the film deposition zone and the dielectric window. |
