SUBSTRATE STRUCTURE, COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING COMPLEMENTARY METAL OXIDE SEMICONDUCTOR

摘要

Disclosed are a substrate structure, a complementary metal oxide semiconductor (CMOS) device including the same, and a method for manufacturing the CMOS device. The disclosed substrate structure includes a substrate, and at least one seed layer including boron or phosphorus on the substrate; and reduces the thickness of a buffer layer layered on the seed layer.