IMAGE SENSOR

摘要

Disclosed is an image sensor. The image sensor of the present invention comprises: a first conductive semiconductor substrate with a trench; a second conductive photoelectric conversion layer which is formed in the semiconductor substrate under the trench; first and second transmission gate electrodes which are arranged by interposing a gate insulating film in the trench; a first charge detecting layer which is formed in the semiconductor substrate on one side of the first transmission gate; and a second charge detecting layer which is formed in the semiconductor substrate on the other side of the second transmission gate electrode.