| 摘要 |
PROBLEM TO BE SOLVED: To provide an infrared detector capable of having superior detection characteristics.SOLUTION: An infrared detector includes a buffer layer (InAsSb layer) 3, a buffer layer (InAs layer) 4, and a light absorption layer (InAsSb layer) 5. The critical film thickness hc of the InAs layer and the thickness t of the InAs layer satisfy a relationship of hc<t. Crystallinity of the buffer layer 4 of InAs and the light absorption layer 5 of InAsSb formed on the buffer layer 3 can be improved. |
