发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can inhibit bonding failure of a bump.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming a first bump electrode on a first surface of a first semiconductor chip; forming second bump electrodes and projections on a second surface of a second semiconductor chip; fixing the first and second semiconductor chips by using the projections so as to oppose the first surface and the second surface; performing reflow on the first semiconductor chip and the second semiconductor chip to electrically connect the first semiconductor chip and the second semiconductor chip; and subsequently curing the projections at a temperature lower than a reflow temperature. |
申请公布号 |
JP2015090937(A) |
申请公布日期 |
2015.05.11 |
申请号 |
JP20130230650 |
申请日期 |
2013.11.06 |
申请人 |
TOSHIBA CORP |
发明人 |
TSUKIYAMA KEISHI;FUKUDA MASATOSHI;OYAMA YUKIFUMI;FUKAYAMA SHINYA |
分类号 |
H01L21/60;H01L25/065;H01L25/07;H01L25/18 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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