发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can inhibit bonding failure of a bump.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming a first bump electrode on a first surface of a first semiconductor chip; forming second bump electrodes and projections on a second surface of a second semiconductor chip; fixing the first and second semiconductor chips by using the projections so as to oppose the first surface and the second surface; performing reflow on the first semiconductor chip and the second semiconductor chip to electrically connect the first semiconductor chip and the second semiconductor chip; and subsequently curing the projections at a temperature lower than a reflow temperature.
申请公布号 JP2015090937(A) 申请公布日期 2015.05.11
申请号 JP20130230650 申请日期 2013.11.06
申请人 TOSHIBA CORP 发明人 TSUKIYAMA KEISHI;FUKUDA MASATOSHI;OYAMA YUKIFUMI;FUKAYAMA SHINYA
分类号 H01L21/60;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L21/60
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