发明名称 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
摘要 A method of forming a resist pattern, including forming a resist film by coating a resist composition including a base component (A) that exhibits increased solubility in an alkali developing solution, a photo-base generator component (C) that generates a base upon exposure, an acid supply component (Z) and a compound (F) containing at least one selected from the group consisting of a fluorine atom and a silicon atom and containing no acid decomposable group which exhibits increased polarity by the action of acid on a substrate; subjecting the resist film to exposure baking the exposed resist film; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern.
申请公布号 US2015147702(A1) 申请公布日期 2015.05.28
申请号 US201514608887 申请日期 2015.01.29
申请人 Tokyo Ohka Kogyo Co., Ltd. 发明人 Nakamura Tsuyoshi;Yokoya Jiro;Shimizu Hiroaki;Nito Hideto
分类号 G03F7/38 主分类号 G03F7/38
代理机构 代理人
主权项 1. A method of forming a resist pattern, comprising: a step (1) in which a resist composition comprising a base component (A) that exhibits increased solubility in an alkali developing solution under the action of acid, a photo-base generator component (C) that generates a base upon exposure, an acid supply component (Z) and a compound (F) containing at least one selected from the group consisting of a fluorine atom and a silicon atom is applied to a substrate to form a resist film; a step (2) in which the resist film is subjected to exposure; a step (3) in which baking is conducted after the step (2), such that, at an exposed portion of the resist film, the base generated from the photo-base generator component (C) upon the exposure and an acid derived from the acid supply component (Z) are neutralized, and at an unexposed portion of the resist film, the solubility of the base component (A) in an alkali developing solution is increased by the action of the acid derived from the acid supply component (Z); and a step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern in which the unexposed portion of the resist film has been dissolved and removed, wherein the compound (F) contains no acid decomposable group which exhibits increased polarity by the action of acid.
地址 Kawasaki-shi JP