发明名称 METHOD FOR MAKING A SCISSORING-TYPE CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH EXCHANGE-COUPLED SOFT SIDE SHIELDS
摘要 A method for making a scissoring type current-perpendicular-to-the-plane magnetoresistive sensor with exchange-coupled soft side shields uses oblique angle ion milling to remove unwanted material from the side edges of the upper free layer. All of the layers making up the sensor stack are deposited as full films. The sensor stack is then ion milled to define the sensor side edges. The side regions are then refilled by deposition of an insulating layer. Next, the lower soft magnetic layers of the exchange-coupled side shields are deposited, which also coats the insulating layer up to and past the side edges of the upper free layer. The soft magnetic material adjacent the side edges of the upper free layer is removed by oblique angle ion beam milling. The material for the antiparallel-coupling (APC) layers is deposited, followed by deposition of the material for the upper soft magnetic layers of the exchange-coupled side shields.
申请公布号 US2015147481(A1) 申请公布日期 2015.05.28
申请号 US201314085593 申请日期 2013.11.20
申请人 HGST Nertherlands B..V. 发明人 Braganca Patrick Mesquita;Katine Jordan Asher;Smith Neil
分类号 G11B5/39;C25D7/00;C25D5/48 主分类号 G11B5/39
代理机构 代理人
主权项 1. A method for making a scissoring type current-perpendicular-to-the-plane magnetoresistive sensor, the sensor having a first free ferromagnetic layer (FL1) and a second free ferromagnetic layer (FL2) separated by a nonmagnetic spacer layer, wherein the FL1 and FL2 magnetization directions are free to rotate relative to one another in the presence of an external magnetic field to be sensed, the method comprising: providing a substrate; depositing FL1, the nonmagnetic spacer layer and FL2 on the substrate; patterning FL1, the nonmagnetic spacer layer and FL2 to define spaced-apart side edges at FL1, the nonmagnetic spacer layer and FL2; depositing a layer of insulating material on the substrate and on the side edges; depositing a first layer of soft ferromagnetic material on the substrate and in contact with the insulating layer at the side edges of FL1, the nonmagnetic spacer layer and FL2; performing oblique angle ion milling of the first layer of soft ferromagnetic material to remove the first layer of soft ferromagnetic material adjacent the side edges of FL2; depositing an antiparallel coupling (APC) layer on the first layer of soft ferromagnetic material; and depositing a second layer of soft ferromagnetic material on the APC layer and in contact with the insulating layer at the side edges of FL2.
地址 Amsterdam NL