| 摘要 |
The invention relates to a semiconductor circuit for emulating a neuron firing process, and more particularly to, a semiconductor circuit for emulating a neuron firing process including a floating body device which includes a floating body and can be replaced with a capacitor, and which is configured to store an excess hole generated by an impact ionization in the floating body, emulates a signal accumulation of a neuron, fires the emulated signal accumulation when the signal accumulation reaches a certain threshold, and returns to an original state thereof. The semiconductor circuit comprises a control device including a floating body connected between a ground and a first node; a first p-channel MOSFET and a second p-channel MOSFET in which a source/drain electrode is connected in parallel between the first node and a power input terminal; a first inverter and a second inverter connected in series between the first node and the first p-channel MOSFET, wherein an output terminal of the first inverter is firstly fed back by being connected to a gate electrode of the second p- channel MOSFET, an output terminal of the second inverter is secondly fed back by being connected to a gate electrode of the first p-channel MOSFET and a second node, an electrical signal received from the pre-synaptic neuron is inputted into a gate electrode of the control device, and an electric signal according an firing of an axon hillock of a post-synaptic neuron is obtained in the output terminal of the first inverter. |
