发明名称 |
Light emitting device and method of fabricating the same |
摘要 |
Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside. |
申请公布号 |
US9059015(B2) |
申请公布日期 |
2015.06.16 |
申请号 |
US201113237778 |
申请日期 |
2011.09.20 |
申请人 |
Seoul Viosys Co., Ltd. |
发明人 |
Seo Won Cheol;Lee Joon Hee;You Jong Kyun;Kim Chang Youn;Shin Jin Cheul;Kim Hwa Mok;Lee Jang Woo;Yoon Yeo Jin;Kim Jong Kyu |
分类号 |
H01L25/075;H01L27/15;H01L33/62;H01L33/00;H01L33/46 |
主分类号 |
H01L25/075 |
代理机构 |
H.C. Park & Associates, PLC |
代理人 |
H.C. Park & Associates, PLC |
主权项 |
1. A light-emitting device, comprising:
a substrate; a first connection metal disposed on the substrate; light-emitting regions disposed on the first connection metal, each light-emitting region comprising an upper semiconductor layer, a lower semiconductor layer, and an active layer disposed between the upper and lower semiconductor layers; a second connection metal electrically connecting adjacent light-emitting regions to each other and comprising openings in which the light-emitting regions are disposed; a bonding metal disposed between the substrate and the first connection metal, the bonding metal being disposed continuously over an entire area below all of the light-emitting regions; a first insulation layer disposed on the second connection metal, surrounding the light emitting regions, and comprising openings in which the light-emitting regions are disposed; and a second insulation layer disposed between the first connection metal and the second connection metal, wherein the light-emitting regions are connected in parallel by the first connection metal and the second connection metal. |
地址 |
Ansan-si KR |