发明名称 Light emitting device and method of fabricating the same
摘要 Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.
申请公布号 US9059015(B2) 申请公布日期 2015.06.16
申请号 US201113237778 申请日期 2011.09.20
申请人 Seoul Viosys Co., Ltd. 发明人 Seo Won Cheol;Lee Joon Hee;You Jong Kyun;Kim Chang Youn;Shin Jin Cheul;Kim Hwa Mok;Lee Jang Woo;Yoon Yeo Jin;Kim Jong Kyu
分类号 H01L25/075;H01L27/15;H01L33/62;H01L33/00;H01L33/46 主分类号 H01L25/075
代理机构 H.C. Park & Associates, PLC 代理人 H.C. Park & Associates, PLC
主权项 1. A light-emitting device, comprising: a substrate; a first connection metal disposed on the substrate; light-emitting regions disposed on the first connection metal, each light-emitting region comprising an upper semiconductor layer, a lower semiconductor layer, and an active layer disposed between the upper and lower semiconductor layers; a second connection metal electrically connecting adjacent light-emitting regions to each other and comprising openings in which the light-emitting regions are disposed; a bonding metal disposed between the substrate and the first connection metal, the bonding metal being disposed continuously over an entire area below all of the light-emitting regions; a first insulation layer disposed on the second connection metal, surrounding the light emitting regions, and comprising openings in which the light-emitting regions are disposed; and a second insulation layer disposed between the first connection metal and the second connection metal, wherein the light-emitting regions are connected in parallel by the first connection metal and the second connection metal.
地址 Ansan-si KR