发明名称 |
PHASE SHIFT MASK BLANK, METHOD OF MANUFACTURING THE SAME, AND PHASE SHIFT MASK |
摘要 |
Provided are a phase shift mask blank that is improved in the irradiation durability of a light-semitransmissive film (phase shift film), made of a material containing mainly a transition metal, silicon, and nitrogen, to exposure light having a wavelength of 200 nm or less and thus can improve the mask lifetime, a method of manufacturing such a phase shift mask blank, and a phase shift mask. The phase shift mask blank is used for manufacturing a phase shift mask adapted to be applied with ArF excimer laser exposure light. The phase shift mask blank has a light-semitransmissive film on a transparent substrate. The light-semitransmissive film is an incomplete nitride film containing mainly a transition metal, silicon, and nitrogen. The content ratio of the transition metal to the transition metal and the silicon in the light-semitransmissive film is less than 9%. |
申请公布号 |
US2015168823(A1) |
申请公布日期 |
2015.06.18 |
申请号 |
US201514627426 |
申请日期 |
2015.02.20 |
申请人 |
HOYA CORPORATION |
发明人 |
NOZAWA Osamu;SHISHIDO Hiroaki;SAKAI Kazuya |
分类号 |
G03F1/32;G03F1/26 |
主分类号 |
G03F1/32 |
代理机构 |
|
代理人 |
|
主权项 |
1. A phase shift mask blank for manufacturing a phase shift mask adapted to be applied with ArF excimer laser exposure light, comprising:
a transparent substrate; and a light-semitransmissive film on the transparent substrate; wherein the light-semitransmissive film is an incomplete nitride film containing mainly a transition metal (M), silicon (Si), and nitrogen (N), a content ratio of the transition metal to the transition metal and the silicon in the light-semitransmissive film is less than 5%, and a content of the nitrogen in the light-semitransmissive film is 40 at % or more and 47 at % or less. |
地址 |
Tokyo JP |