发明名称 MONITORING METHOD AND DEVICE FOR POWER SEMICONDUCTOR SWITCH
摘要 An exemplary power semiconductor switch is configured to be controlled on the basis of a gate voltage signal driven by a gate driver unit. The device includes a measuring component for generating a saturation voltage signal on the basis of a voltage over the power semiconductor switch, and an auxiliary switch connected between a saturation voltage signal line carrying the saturation voltage signal and an output of the gate driver unit driving the gate voltage signal. The auxiliary switch is configured to be controlled to a conductive state or a non-conductive state on the basis of the gate voltage signal. A feedback component is provided for generating a saturation feedback signal on the basis of the saturation voltage signal.
申请公布号 US2015180463(A1) 申请公布日期 2015.06.25
申请号 US201414565153 申请日期 2014.12.09
申请人 ABB OY 发明人 PELTONEN Lauri
分类号 H03K17/082;G01R31/28;G01R31/327;H02M1/08 主分类号 H03K17/082
代理机构 代理人
主权项 1. A device for a power semiconductor switch configured to be controlled on the basis of a gate voltage signal driven by a gate driver unit, the device comprising: measuring means for generating a saturation voltage signal on the basis of a voltage over the power semiconductor switch; an auxiliary switch connected between a saturation voltage signal line carrying the saturation voltage signal and an output of the gate driver unit driving the gate voltage signal, wherein the auxiliary switch is configured to be controlled to a conductive state or a non-conductive state on the basis of the gate voltage signal; and feedback means for generating a saturation feedback signal on the basis of the saturation voltage signal.
地址 Helsinki FI