| 发明名称 |
Curing Photo Resist for Improving Etching Selectivity |
| 摘要 |
A method includes exposing and developing a negative photo resist, and performing a treatment on the negative photo resist using an electron beam. After the treatment, a layer underlying the photo resist is etched using the negative photo resist as an etching mask. |
| 申请公布号 |
US2015179511(A1) |
申请公布日期 |
2015.06.25 |
| 申请号 |
US201314134526 |
申请日期 |
2013.12.19 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Hsieh Wen-Kuo;Chu Tsung-Hung;Liang Ming-Chung |
| 分类号 |
H01L21/768;H01L21/027;G03F7/40;H01L21/3213 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
exposing and developing a negative photo resist; performing a treatment on the negative photo resist using an electron beam; and after the treatment, etching a layer underlying the negative photo resist using the negative photo resist as an etching mask. |
| 地址 |
Hsin-Chu TW |
