发明名称 |
SULFUR-CONTAINING THIN FILMS |
摘要 |
In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel. |
申请公布号 |
WO2015094551(A1) |
申请公布日期 |
2015.06.25 |
申请号 |
WO2014US66316 |
申请日期 |
2014.11.19 |
申请人 |
ASM IP HOLDING B.V. |
发明人 |
HAUKKA, SUVI, P.;TANG, FU;GIVENS, MICHAEL, E.;MAES, JAN, WILLIAM;XIE, QI |
分类号 |
C23C16/06 |
主分类号 |
C23C16/06 |
代理机构 |
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代理人 |
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地址 |
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