发明名称 METHOD FOR REMOVING OF RESIDUAL CHARGE, X-RAY IMAGING METHOD AND APPARATUS USING THE METHOD
摘要 <p>A method of removing residual charge from a photoconductive material includes applying a first voltage to the photoconductive material to form an electrostatic field during a collection operation in which x-rays are irradiated onto the photoconductive material; and applying a second voltage to the photoconductor to reduce an amount of residual charge therein during a removal operation, the second voltage being different from the first voltage. In one or more of the embodiments, the photoconductive material may include Mercury Iodine (Hgl2).</p>
申请公布号 IN2527DE2014(A) 申请公布日期 2015.06.26
申请号 IN2014DE02527 申请日期 2014.09.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YOUNG KIM;SUNIL KIM;JAECHUL PARK;KANGHO LEE
分类号 G01N23/04 主分类号 G01N23/04
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