SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

摘要

Provided are a substrate processing apparatus capable of executing a plasma treatment using microwaves and a heat treatment by the projection of microwaves for a substrate, and a substrate processing method. The substrate processing apparatus (1) comprises: a processing container (2); a microwave induction device (3) to induce microwaves into the processing container (2); and a placement table (4) to support a wafer (W) inside the processing container (2). The placement table (4) is made of a material capable of transmitting microwaves. A plasma processing space (S1) to execute the plasma treatment for the wafer (W) and a microwave induction space (S2) wherein microwaves are induced are formed in the processing container (2). The microwaves passing through the placement table (4) are used for heating of the wafer (W) by arriving at the plasma processing space (S1) before being consumed by plasma.