| 摘要 |
<p>The circuit (12) has a substrate (32) comprising an insulation material with two conducting layers (34, 36), which are adapted to receive a potential difference of about 50 KV. One of the conducting layers is connected to an integrated circuit (14). The insulating material comprises 25-70% of boron nitride in a cubic form, 25-75% of aluminum nitride and 0-50% of sintering elements, by weight. The substrate is made of material that comprises 35% of cubic boron nitride and 65% of aluminum nitride, by weight. The sintering elements consist of yttrium oxide, nitride, oxide or calcium oxide. The integrated circuit is a MOSFET. Independent claims are also included for the following: (1) an electric device for directly connected with an overhead line (2) a method for manufacturing an electric circuit.</p> |
