THIN FILM TRANSISTOR

摘要

The present invention provides a thin film transistor. The thin transistor includes a substrate; an active layer formed on the substrate; a gate insulating film formed on the active layer; a gate electrode formed on the gate insulating film; a doping area formed on the active layer on both sides of the gate electrode; and source and drain electrodes separated from each other on the substrate on both sides of the gate electrode, and making direct contact with the doping area. Therefore, the present invention is able to provide a self-arrangement type semiconductor thin film transistor structure without a contact process.