STACKING STRUCTURE HAVING MATERIAL LAYER ON GRAPHENE LAYER AND METHOD OF FORMING MATERIAL LAYER ON GRAPHENE LAYER

摘要

In the present invention, disclosed are stacking structures including a material layer formed on a graphene layer and a method for forming the material layer on the graphene layer where a linear pre-cursor is used on the graphene layer, thereby forming a middle layer as a seed layer when the material layer is formed on the graphene layer with use of an atomic layer deposition method in the disclosed stacking structure.