发明名称 EXTREME ULTRAVIOLET LIGHT SOURCE
摘要 A target material is provided at a target location, the target material including a material that emits extreme ultraviolet light when converted to plasma, and the target material extending in a first extent along a first direction and in a second extent along a second direction; an amplified light beam is directed along a direction of propagation toward the target location; and the amplified light beam is focused in a focal plane, where the target location is outside of the focal plane and an interaction between the amplified light beam and the target material converts at least part of the target material to plasma that emits EUV light.
申请公布号 US2015208494(A1) 申请公布日期 2015.07.23
申请号 US201414489411 申请日期 2014.09.17
申请人 ASML Netherlands B.V. 发明人 Rafac Robert J.;Sandstrom Richard L.;Brown Daniel;Hou Kai-Chung
分类号 H05G2/00 主分类号 H05G2/00
代理机构 代理人
主权项 1. A method of reducing back reflections in an extreme ultraviolet (EUV) light system, the method comprising: providing a target material that comprises a material that emits extreme ultraviolet light when converted to plasma and reflects light that propagates along a direction of propagation in a first direction; modifying a geometric distribution of the target material to form a modified target, the modified target comprising an optically reflective surface that reflects light that propagates along the direction of propagation in a second direction that is different from the first direction; and directing an amplified light beam from an optical source along the direction of propagation toward the reflective surface of the modified target, the amplified light beam converting at least part of the modified target to plasma that emits EUV light and producing a reflection of the amplified light beam that travels in the second direction, to thereby direct the reflection away from the source.
地址 Veldhoven NL