| 摘要 |
PROBLEM TO BE SOLVED: To provide a mask for reflection type EUV exposure capable of enlarging an exposure area while suppressing alteration of an existing mask manufacturing infrastructure to a minimum and maintaining a bottom area of a 6-inch mask.SOLUTION: The mask for EUV exposure has a configuration in which one principle plane of a substrate 21 is a semicylindrical curved side surface having specific radius and length, a multilayer reflection layer 22, a protective layer 23, and an absorption layer 24 are provided in this order on the side surface, a conductive layer 25 is included on the other principle plane, and the absorption layer 24 has an unevenness A corresponding to an exposure pattern. |
