SEMICONDUCTOR WAFER PROCESSING METHOD

摘要

PROBLEM TO BE SOLVED: To enable formation of a parting groove along a street while restraining glass passivation film from being destructed from the inside due to transmission of a laser beam through the glass passivation film.SOLUTION: In a semiconductor wafer (W), a laminate material (W2) is laminated on the surface of a semiconductor substrate (W1) and a device (D) is formed by the laminate material. The device is comparted by a street (ST). Glass passivation film (W3) is coated and formed on the surface of the device and the street. A passivation film parting groove forming step is performed in which a COlaser beam having a wavelength to which the glass passivation film has absorbency is irradiated along a street to form a parting groove (M1) the street. Thereafter, a parting groove forming step is performed in which a laser beam (Ly) having a wavelength to which the laminate material has absorbency is irradiated along the parting groove to form a parting groove (M2) along the street.