| 发明名称 |
DEEP TRENCH CAPACITOR |
| 摘要 |
A deep trench capacitor structure including an SOI substrate comprising an SOI layer, a rare earth oxide layer, and a bulk substrate, the rare earth oxide layer is located below the SOI layer and above the bulk substrate, and the rare earth oxide layer insulates the SOI layer from the bulk substrate, and a deep trench capacitor extending from a top surface of the SOI layer, through the rare earth oxide layer, down to a location within the bulk substrate, the rare earth oxide layer contacts the deep trench capacitor at an interface between the rare earth oxide layer and the bulk substrate forming an incline away from the deep trench capacitor. |
| 申请公布号 |
US2015221715(A1) |
申请公布日期 |
2015.08.06 |
| 申请号 |
US201514684533 |
申请日期 |
2015.04.13 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Cheng Kangguo;Ervin Joseph;Pei Chengwen;Todi Ravi M.;Wang Geng |
| 分类号 |
H01L49/02;H01L27/108;H01L27/12 |
主分类号 |
H01L49/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A deep trench capacitor structure in a semiconductor-on-insulator (SOI) substrate the structure comprising:
a SOI substrate comprising a SOI layer, a rare earth oxide layer, and a bulk substrate; the rare earth oxide layer is located below the SOI layer and above the bulk substrate, and the rare earth oxide layer insulates the SOI layer from the bulk substrate; and a deep trench capacitor extending from a top surface of the SOI layer, through the rare earth oxide layer, down to a location within the bulk substrate, wherein the rare earth oxide layer contacts the deep trench capacitor at an interface between the rare earth oxide layer and the bulk substrate forming an incline away from the deep trench capacitor. |
| 地址 |
Armonk NY US |
