PROCESS-COMPATIBLE SPUTTERING TARGET FOR FORMING FERROELECTRIC MEMORY CAPACITOR PLATES

摘要

A sputtering target for a conductive oxide, such as SrRuO3, to be used for the sputter deposition of a conductive film that is to be in contact with a ferroelectric material in an integrated circuit. The sputtering target is formed by the sintering of a powder mixture of the conductive oxide with a sintering agent of an oxide of one of the constituents of the ferroelectric material. For the example of lead-zirconium-titanate (PZT) as the ferroelectric material, the sintering agent is one or more of a lead oxide, a zirconium oxide, and a titanium oxide. The resulting sputtering target is of higher density and lower porosity, resulting in an improved sputter deposited film that does not include an atomic species beyond those of the ferroelectric material deposited adjacent to that film.

主权项

1. A method of fabricating an integrated circuit including a ferroelectric capacitor, comprising the steps of:
depositing a first conductive film, comprising a conductive oxide, near a semiconducting surface of a body, by sputter deposition of the conductive oxide from a sputtering target; depositing a ferroelectric material overlying the first conductive film, the ferroelectric material comprising a compound of a plurality of metal constituents; depositing a second conductive film, comprising the conductive oxide, overlying the ferroelectric material; and removing portions of the first and second conductive films, and the ferroelectric material, at selected locations, to define the ferroelectric capacitor; wherein the sputtering target comprises a conductive oxide sintered body containing an oxide of one of the plurality of metal constituents of the ferroelectric material.