METHOD OF FABRICATING NITRIDE FILM AND METHOD OF CONTROLLING COMPRESSIVE STRESS OF THE SAME

摘要

The present invention relates to a method for producing a nitride layer that easily controls compressive stress while stably maintaining layer quality by using the atomic layer deposition method. The present invention performs at least one or more unit cycles in order to form the nitride layer having compressive stress on the substrate. The unit cycle comprises: a first step of providing a source gas on a substrate to enable at least a portion of the source gas to be adsorbed on the substrate; a second step of providing a first purge gas on the substrate; a third step of providing the stress control gas containing the nitrogen gas and the reaction gas containing a nitrogen component, except for the nitrogen gas in a plasma state on the substrate to form the unit deposition layer; and a fourth step of providing the second purge gas on the substrate.