| 摘要 |
According to the present invention, a film with high carbon density is formed. A method for manufacturing a semiconductor device forms a film including a first element, a second element, and carbon on a substrate, by repeating a cycle performing: a process of forming a first layer including the first element and carbon, by supplying raw material gas having chemical bonding of the first element and carbon from a first supply part, as to the substrate in a processing chamber; and a process of forming a second layer by reforming the first layer, by supplying inert gas plasma-excited from a third supply part different from a second supply part as well as supplying reaction gas including the second element from the second supply part, as to the substrate in the processing chamber. The method repeats the cycle in a fixed number of times. |
