发明名称 |
Method of forming emitters for a back-contact solar cell |
摘要 |
Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing. |
申请公布号 |
US9147795(B2) |
申请公布日期 |
2015.09.29 |
申请号 |
US201414555383 |
申请日期 |
2014.11.26 |
申请人 |
SunPower Corporation |
发明人 |
Li Bo;Cousins Peter J.;Smith David D. |
分类号 |
H01L31/18;H01L31/068;H01L31/0224 |
主分类号 |
H01L31/18 |
代理机构 |
Blakely Sokoloff Taylor Zafman LLP |
代理人 |
Blakely Sokoloff Taylor Zafman LLP |
主权项 |
1. A method of forming emitters for a solar cell, the method comprising:
printing a first solid-state dopant source of a first conductivity type above a substrate, the first solid-state dopant source comprising a plurality of spaced apart regions; depositing by chemical vapor deposition a second solid-state dopant source of a second conductivity type above and between the plurality of spaced apart regions of the first solid-state dopant source, wherein the first conductivity type is opposite the second conductivity type; and patterning the second solid-state dopant source to form a plurality of first regions of the second solid-state dopant source alternating with but not in contact with the plurality of spaced apart regions of the first solid-state dopant source, and to form a plurality of second regions of the second solid-state dopant source on the plurality of spaced apart regions of the first solid-state dopant source; and driving dopants from the plurality of first regions of the second solid-state dopant source and from the first solid-state dopant source, but not from the plurality of second regions of the second solid-state dopant source, into the substrate. |
地址 |
San Jose CA US |