发明名称 Method of forming emitters for a back-contact solar cell
摘要 Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing.
申请公布号 US9147795(B2) 申请公布日期 2015.09.29
申请号 US201414555383 申请日期 2014.11.26
申请人 SunPower Corporation 发明人 Li Bo;Cousins Peter J.;Smith David D.
分类号 H01L31/18;H01L31/068;H01L31/0224 主分类号 H01L31/18
代理机构 Blakely Sokoloff Taylor Zafman LLP 代理人 Blakely Sokoloff Taylor Zafman LLP
主权项 1. A method of forming emitters for a solar cell, the method comprising: printing a first solid-state dopant source of a first conductivity type above a substrate, the first solid-state dopant source comprising a plurality of spaced apart regions; depositing by chemical vapor deposition a second solid-state dopant source of a second conductivity type above and between the plurality of spaced apart regions of the first solid-state dopant source, wherein the first conductivity type is opposite the second conductivity type; and patterning the second solid-state dopant source to form a plurality of first regions of the second solid-state dopant source alternating with but not in contact with the plurality of spaced apart regions of the first solid-state dopant source, and to form a plurality of second regions of the second solid-state dopant source on the plurality of spaced apart regions of the first solid-state dopant source; and driving dopants from the plurality of first regions of the second solid-state dopant source and from the first solid-state dopant source, but not from the plurality of second regions of the second solid-state dopant source, into the substrate.
地址 San Jose CA US