发明名称 |
LOCAL HETEROSTRUCTURE CONTACTS |
摘要 |
<p>The device has a surface passivated-layer of a semiconductor material formed by plasma etching through openings (45) of a stretched foil (7). The stretched foil serves as a masking for separation processes of hetero contacts, transparent conductive oxide or metals and/or plasma processes. A contact region is exposed to hydrogen plasma after the formation of the layer and is heated to a temperature between 300 [deg] C and 600 [deg] C. An independent claim is also included for a method for producing a local-hetero contact.</p> |
申请公布号 |
EP2062300(B1) |
申请公布日期 |
2015.09.30 |
申请号 |
EP20070817456 |
申请日期 |
2007.08.28 |
申请人 |
CSEM CENTRE SUISSE D'ELECTRONIQUE ET DE MICROTECHNIQUE-RECHERCHE ET DÉVELOPPEMENT |
发明人 |
FAHRNER, WOLFGANG, RAINER |
分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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