发明名称 |
Fabrication method of GaAs substrate |
摘要 |
<p>A GaAs semiconductor substrate (10) includes a surface layer (10a). When an atomic ratio is to be calculated using a 3d electron spectrum of Ga atoms and As atoms measured at the condition of 10° for the photoelectron take-off angle ¸ by X-ray photoelectron spectroscopy, the structural atomic ratio of all Ga atoms to all As atoms (Ga)/(As) at the surface layer (10a) is at least 0.5 and not more than 0.9, the ratio of As atoms bound with O atoms to all Ga atoms and all As atoms (As - O)/{(Ga) + (As)} at the surface layer (10a) is at least 0.15 and not more than 0.35, and the ratio of Ga atoms bound with O atoms to all Ga atoms and all As atoms (Ga - O)/{(Ga) + (As)} at the surface layer (10a) is at least 0.15 and not more than 0.35. Accordingly, there is provided a GaAs semiconductor substrate having a surface cleaned to an extent allowing removal of impurities and oxides at the surface by at least thermal cleaning of the substrate.</p> |
申请公布号 |
EP2003697(B1) |
申请公布日期 |
2015.09.30 |
申请号 |
EP20070019734 |
申请日期 |
2007.10.09 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NISHIURA, TAKAYUKI;MEZAKI, YOSHIO;HORIE, YUSUKE;HIGUCHI, YASUAKI |
分类号 |
H01L21/02;C30B29/42;C30B33/10;H01L21/324 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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