Techniques for storing bits in memory cells having stuck-at faults

摘要

A data storage system includes a memory circuit comprising memory cells and a control circuit. The control circuit generates a first set of redundant bits indicating bit positions of the memory cells having stuck-at faults in response to a first write operation if a first rate of the stuck-at faults in the memory cells is greater than a first threshold. The control circuit is operable to encode data bits to generate encoded data bits and a second set of redundant bits that indicate a transformation performed on the data bits to generate the encoded data bits in response to a second write operation if a second rate of stuck-at faults in the memory cells is greater than a second threshold. The encoded data bits stored in the memory cells having the stuck-at faults match digital values of corresponding ones of the stuck-at faults.