发明名称 |
METHOD FOR PROVIDING MIXED STACKED STRUCTURES, WITH VARIOUS INSULATING ZONES AND/OR ELECTRICALLY CONDUCTING ZONES VERTICALLY LOCALIZED |
摘要 |
<p>The invention relates to a method for producing a semiconducting structure on a semiconducting substrate, one surface of which has a topology, this method including: a) a step for forming a first layer (24) in a first insulating material on said surface, b) a step for forming a second layer in a second insulating material (28), less dense than the first insulating material, with a thickness between 2.5 p and 3.5 p, c) a step for planarization of the assembly.</p> |
申请公布号 |
EP1797587(B1) |
申请公布日期 |
2015.09.30 |
申请号 |
EP20050810739 |
申请日期 |
2005.10.06 |
申请人 |
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIESALTERNATIVES |
发明人 |
MORICEAU, HUBERT;MORALES, CHRISTOPHE;ZUSSY, MARC;DECHAMP, JÉRÔME |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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