| 摘要 |
Disclosed are an organic germanium amine compound represented by Chemical Formula 1, and a film forming method using the compound as a precursor. In Chemical Formula 1, L_1, L_2, L_3, and L_4 are independently selected from a hydrogen atom, a C 1 to 10 alkyl group, a C 6 to 12 aryl group, a C 1 to 10 alkylamine group, a C 6 to 12 arylamine group, a C 7 to 13 aralkylamine group, a C 3 to 10 cyclic amine group, a C 3 to 10 heterocyclic amine group, or a C 2 to 10 alkylsilylamine group. When the compound according to the present invention is used as a precursor, a germanium oxide film, a germanium nitride film, a metal germanium oxide film, or a metal germanium nitride film may be effectively deposited. |
