| 摘要 |
The present invention relates to a method for generating a power semiconductor module (14) using a heat applying joining technique for joining two joining partners (10, 16), the heat applying joining technique comprising the steps of:
a) Providing a first joining partner (16) with a joining surface;
b) Coating the joining surface of the first joining partner (16) at least partly with a protection coating (22), the protection coating (22) having a decomposition temperature t 1 at which the material of the protection coating (22) goes into the gaseous phase;
c) Optionally applying a joining material (23) to at least a part of the protection coating (22) or to a joining surface of the second joining partner (16); and
d) Joining the joining surfaces of the two joining partners (10, 16) by applying heat with a temperature t 2 , wherein t 2 ‰¥ t 1 and by optionally applying pressure to the joining partners (10, 16). One of the first and second joining partners (10, 16) is a substrate (10) and the further of the first and second joining partners (10, 16) is a power semiconductor device (16), a baseplate or a terminal. The heat applying joining technique may be a sintering process, a soldering process or an ultrasonic welding process. Such a method provides an especially gentle and cost-saving method for heat applying joining techniques, such as die-attachment. |
