| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a quartz crystal device capable of stably manufacturing an extremely thin quartz crystal thin film having a thickness equal to or less than severalμm, and a quartz crystal device manufactured by the manufacturing method. <P>SOLUTION: A manufacturing method for a quartz crystal device comprises: a step of forming amorphous layers 13A to 13C in a quartz crystal single crystal substrate 1 by implanting hydrogen ions into the quartz crystal single crystal substrate 1 to make a portion at a fixed depth from a surface 1A amorphous, where the depth of the formed amorphous layer depends on an implantation condition of ions or atoms (implantation energy or dosage) to form a uniform and flat layer having a depth of 1μm to severalμm depending on the implantation condition; and a step of forming a plurality of grooves 14A to 14D from the surface 1A so that side faces of the amorphous layers are exposed before performing etching by introducing an etchant into the grooves, where removal of the amorphous layers 13A to 13C by the etching separates quartz crystal thin films 15A to 15C from the quartz crystal single crystal substrate 1 because etching speed of amorphous quartz is higher than that of quartz crystal. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
