| 发明名称 |
Compound semiconductor device and method of fabricating the same |
| 摘要 |
<p>A GaN layer functions as an electron transit layer and is formed to exhibit, at least at a portion thereof, an A/B ratio of 0.2 or less obtained by a photoluminescence measurement, where "A" is the light-emission intensity in the 500-600 nm band, and "B" is the light-emission intensity at the GaN band-edge.</p> |
| 申请公布号 |
EP1657754(B1) |
申请公布日期 |
2015.09.30 |
| 申请号 |
EP20050254240 |
申请日期 |
2005.07.06 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
KIKKAWA, TOSHIHIDE;IMANISHI, KENJI |
| 分类号 |
H01L29/20;H01L21/205;H01L21/335;H01L21/338;H01L29/778;H01L29/812 |
主分类号 |
H01L29/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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