Semiconductor nanostructure

摘要

The present disclosure relates to a semiconductor nanostructure. The semiconductor nanostructure includes a substrate and at least one ridge. The substrate includes a first crystal plane and a second crystal plane perpendicular to the first crystal plane. The at least one ridge extends from the first crystal plane along a crystallographic orientation of the second crystal plane. A width of cross section at a position of half the height of the at least one ridge is less than 17 nm. The semiconductor nanostructure is a patterned structure which can lead to generate a quantum confinement effect, such that the impurity scattering phenomenon is reduced.

主权项

1. A semiconductor nanostructure comprising:
a substrate comprising a first crystal plane and a second crystal plane substantially perpendicular to the first crystal plane; and at least one ridge extending from the first crystal plane along a crystallographic orientation of the second crystal plane, wherein a width of cross section at a position of half the height of the at least one ridge is less than 17 nm, and a thickness of the substrate is in a range from about a thickness of five atom layers to about a thickness of fifteen atom layers of a material of the substrate, and the substrate has a quantum confinement effect.