| 主权项 |
1. A resist underlayer film composition, the resist underlayer film composition used in a patterning process to form a pattern on a substrate wherein a resist underlayer film is formed on the substrate by using the resist underlayer film composition, at least a resist upper layer film is formed on the resist underlayer film by using a photoresist composition, after the resist upper layer film is exposed and developed to form a pattern, the pattern formed on the resist upper layer film is transferred to the resist underlayer film, and then the pattern transferred to the resist underlayer film is transferred to the substrate; wherein the resist underlayer film composition contains a truxene compound having a substituted or an unsubstituted naphthol group as shown by the following general formula (1),provided that: in the general formula (1), R1, R4, R7, R10, R11, and R12 represent the same or different groups of a hydrogen atom, a linear, a branched, or a cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, a hydroxy group, an alkoxy group, an acyloxy group, a cyano group, a nitro group, an amino group, or a halogen atom; R2, R5, and R9 represent the same or different groups of a hydrogen atom, a linear, a branched, or a cyclic alkyl group having 1 to 6 carbon atoms, an acyl group, a glycidyl group, or an acid-labile group; R3, R6, and R9 represent the same or different groups of a hydrogen atom, a hydroxy group, a linear, a branched, or a cyclic alkyl group having 1 to 10 carbon atoms, an alkoxy group, an alkenyl group having 2 to 10 carbon atoms, an alkynyl group having 2 to 10 carbon atoms, or an aryl group having 6 to 20 carbon atoms; and p, q, and r represent an integer of 1 to 6. |
