Electro-optic device having an electrostatic protection circuit for protecting a gate driver and display device thereof

摘要

An electro-optic device includes: a pixel area having plural pixels; and a frame area formed in a periphery of the pixel area, on an insulating substrate, wherein the frame area includes a drive circuit driving the pixels, a control signal line to which control signals controlling the drive circuit are applied, a common potential electrode having the same potential as a common potential applied to every pixels in common, and an electrostatic protection circuit protecting the drive circuit, and the electrostatic protection circuit includes plural diodes connected in series to each other between the control signal line and the common potential electrode as well as formed by thin-film transistors.

主权项

1. An electro-optic device comprising:
a pixel area having plural pixels; and a frame area formed in a periphery of the pixel area, on an insulating substrate, wherein the frame area includes
a drive circuit driving the pixels,a control signal line to which control signals controlling the drive circuit are applied,a common potential electrode having the same potential as a common potential applied to every pixels in common, andan electrostatic protection circuit protecting the drive circuit,the electrostatic protection circuit includes plural diodes, formed by thin-film transistors (TFT), the control signal line, a first diode of the plural diodes, a second diode of the plural diodes and the common potential electrode are connected in this order in series, each of the first diode and the second diode including a first thin-film transistor and a second thin-film transistor, the first thin-film transistor and the second thin-film transistor being connected in parallel in which one of a source and a drain of the first thin-film transistor positioned near the control signal line is electrically connected to a gate of the first thin-film transistor and the other of the first thin-film transistor positioned near the common potential electrode is electrically connected to a gate of the second thin-film transistor, andthe plural diodes are configured so that a TFT channel length of a diode positioned near the common potential electrode is longer than a TFT channel length of a diode positioned near the control signal line.