发明名称 EXTREME ULTRAVIOLET LITHOGRAPHY MASK BLANK MANUFACTURING SYSTEM AND METHOD OF OPERATION THEREFOR
摘要 A processing system includes: a vacuum chamber; a plurality of processing systems attached around the vacuum chamber; and a wafer handling system in the vacuum chamber for moving the wafer among the plurality of processing systems without exiting from a vacuum. A physical vapor deposition system for manufacturing an extreme ultraviolet blank comprising: a target comprising molybdenum, molybdenum alloy, or a combination thereof.
申请公布号 SG11201506470U(A) 申请公布日期 2015.09.29
申请号 SG11201506470U 申请日期 2014.03.12
申请人 APPLIED MATERIALS, INC. 发明人 HOFMANN, RALF;BEASLEY, CARA;FOAD, MAJEED A.
分类号 H01L21/027;H01L21/02;H01L21/203 主分类号 H01L21/027
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