发明名称 |
EXTREME ULTRAVIOLET LITHOGRAPHY MASK BLANK MANUFACTURING SYSTEM AND METHOD OF OPERATION THEREFOR |
摘要 |
A processing system includes: a vacuum chamber; a plurality of processing systems attached around the vacuum chamber; and a wafer handling system in the vacuum chamber for moving the wafer among the plurality of processing systems without exiting from a vacuum. A physical vapor deposition system for manufacturing an extreme ultraviolet blank comprising: a target comprising molybdenum, molybdenum alloy, or a combination thereof. |
申请公布号 |
SG11201506470U(A) |
申请公布日期 |
2015.09.29 |
申请号 |
SG11201506470U |
申请日期 |
2014.03.12 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
HOFMANN, RALF;BEASLEY, CARA;FOAD, MAJEED A. |
分类号 |
H01L21/027;H01L21/02;H01L21/203 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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