发明名称 Method for fabricating semiconductor structure
摘要 A method for fabricating a semiconductor structure is disclosed. First, an interposer is disposed on a carrier. The carrier has a base body and a bonding layer bonded to the base body. The interposer has opposite first and second sides and the first side has a plurality of conductive elements. The interposer is disposed on the carrier with the first side bonded to the bonding layer and the conductive elements embedded in the bonding layer. Then, at least a semiconductor element is disposed on the second side of the interposer. As such, the semiconductor element and the interposer form a semiconductor structure. Since the conductive elements are embedded in the bonding layer instead of the base body, the present invention eliminates the need to form concave portions in the base body for receiving the conductive elements. Therefore, the method of the present invention is applicable to interposers of different specifications.
申请公布号 US9147668(B2) 申请公布日期 2015.09.29
申请号 US201314074165 申请日期 2013.11.07
申请人 Siliconware Precision Industries Co., Ltd. 发明人 Yeh Chi-Tung;Lin Chun-Tang
分类号 H01L23/00 主分类号 H01L23/00
代理机构 Mintz Levin Cohn Ferris Glovsky and Popeo, P.C. 代理人 Mintz Levin Cohn Ferris Glovsky and Popeo, P.C. ;Corless Peter F.;Jensen Steven M.
主权项 1. A method for fabricating a semiconductor structure, comprising the steps of: disposing an interposer on a carrier, wherein the carrier has a base body, a release layer, and a bonding layer bonded to the base body, the interposer has a first side with a plurality of conductive elements and a second side opposite to the first side such that the interposer is disposed on the carrier with the first side bonded to the bonding layer and the conductive elements embedded in the bonding layer, and the release layer is formed between the base body and the bonding layer; disposing a plurality of semiconductor elements on the second side of the interposer, wherein the semiconductor element and the interposer form a semiconductor structure, and the interposer has a plurality of substrate units; performing a singulation process to the interposer; after performing the singulation process, removing the release layer to separate the semiconductor structure and the bonding layer on the semiconductor structure from the base body; and after removing the release layer, removing the bonding layer.
地址 Taichung TW