Integrated circuit device

摘要

An integrated circuit device includes a substrate, at least one transistor, at least one metal layer, a conductive pillar, and a connecting structure. The substrate has at least one via passing therethrough. The transistor is at least partially disposed in the substrate. The metal layer is disposed on or above the substrate. The conductive pillar is disposed in the via. The connecting structure is at least partially disposed in the via and connecting the conductive pillar and the metal layer. At least a first portion of the connecting structure is made of a stress releasing material having a coefficient of thermal expansion less than a coefficient of thermal expansion of the conductive pillar. A projection of the transistor in the via overlaps with the connecting structure.

主权项

1. An integrated circuit device, comprising:
a substrate having at least one via passing therethrough; at least one transistor at least partially disposed in the substrate; at least one metal layer disposed on or above the substrate; a conductive pillar disposed in the via; and a connecting structure at least partially disposed in the via and connecting the conductive pillar and the metal layer, wherein a diameter of the conductive pillar is substantially the same as a diameter of the connecting structure, the entire connecting structure is made of a stress releasing material having a coefficient of thermal expansion less than a coefficient of thermal expansion of the conductive pillar, a projection of the transistor in the via overlaps with the connecting structure, and the connecting structure comprises:
a first portion made of oxide; anda second portion connecting the conductive pillar and the metal layer, and the second portion is made of a conductive material.