发明名称 Contact-based encapsulation
摘要 An electrical connection between two chips includes an IC pad on a first chip, an IC pad on a second chip, a first barrier metal over the IC pad of the first chip, a second barrier metal over the IC pad of the second chip, a malleable electrically conductive metal, different from the barrier metals, trapped between the first barrier metal and the second barrier metal, the first barrier metal, the malleable conductive metal and the second barrier metal forming a complete electrically conductive path between the IC pad of the first chip and the IC pad of the second chip.
申请公布号 US9147635(B2) 申请公布日期 2015.09.29
申请号 US201012966699 申请日期 2010.12.13
申请人 CUFER ASSET LTD. L.L.C. 发明人 Trezza John;Callahan John;Dudoff Gregory
分类号 H01L21/48;H01L23/427;H01L21/683;H01L21/768;H01L23/48;H01L23/498;H01L23/538;H01L23/552;H01L23/66;H01L23/00;H01L25/065;H01L25/18;H01L25/00;H01L23/488;H01S5/022;H01S5/042;H01S5/183 主分类号 H01L21/48
代理机构 代理人
主权项 1. A method comprising: providing a first chip comprising a first electrical contact that includes a first integrated circuit (IC) pad, a first barrier layer over the first IC pad, and a malleable material disposed over the first harrier layer that is different from the first barrier layer; providing a second chip comprising a second electrical contact that includes a second IC pad, a rigid metal post disposed over the second IC pad, and a diffusion barrier layer disposed over the rigid metal post; and electrically connecting the first electrical contact to the second electrical contact such that the malleable material is substantially disposed between the first barrier layer and the diffusion barrier layer and the rigid metal post is at least partially enclosed within the malleable material; wherein the diffusion barrier layer prevents interdiffusion of the malleable material with the rigid metal post.
地址 Wilmington DE US