Contact clean by remote plasma and repair of silicide surface

摘要

Embodiments provide methods for treating a metal silicide contact which includes positioning a substrate having an oxide layer disposed on a metal silicide contact surface within a processing chamber, cleaning the metal silicide contact surface to remove the oxide layer while forming a cleaned silicide contact surface during a cleaning process, and exposing the cleaned silicide contact surface to a silicon-containing compound to form a recovered silicide contact surface during a regeneration process. In some examples, the cleaning of the metal silicide contact surface includes cooling the substrate to an initial temperature of less than 65° C., forming reactive species from a gas mixture of ammonia and nitrogen trifluoride by igniting a plasma, exposing the oxide layer to the reactive species to form a thin film, and heating the substrate to about 100° C. or greater to remove the thin film from the substrate while forming the cleaned silicide contact surface.

主权项

1. A method for treating a metal silicide contact, comprising:
positioning a substrate within a processing chamber, wherein the substrate comprises an oxide layer disposed on a metal silicide contact surface; cleaning the metal silicide contact surface to remove the oxide layer while forming a cleaned silicide contact surface during a cleaning process, comprising:
cooling the substrate to an initial temperature of less than 65° C.;forming reactive species from a gas mixture of ammonia and nitrogen trifluoride by igniting a plasma;exposing the oxide layer to the reactive species to form a thin film; andheating the substrate to an anneal temperature of about 100° C. or greater to remove the thin film from the substrate while forming the cleaned silicide contact surface; exposing the cleaned silicide contact surface to a silicon-containing compound to form a recovered silicide contact surface during a regeneration process, wherein the silicon-containing compound comprises silane or disilane; and depositing one or more barrier layers over the recovered silicide contact surface.