| 摘要 |
A high-voltage nitride device which can avoid vertical breakdown and has a high breakdown voltage includes: a silicon substrate; a nitride nucleation layer prepared on the silicon substrate; a nitride buffer layer prepared on the nitride nucleation layer; a nitride channel layer prepared on the nitride buffer layer; a source electrode and a drain electrode, both of which are contacted with the nitride channel layer; a gate electrode, prepared between the source electrode and the drain electrode; and, at least one spatial isolation area, formed between the silicon substrate and the nitride epitaxial layer and below a region between the gate electrode and the drain electrode. |
