| 发明名称 | Resist composition, resist pattern-forming method, and resist solvent | ||
| 摘要 | A resist composition includes a polymer that includes an acid-labile group-containing structural unit, a photoacid generator, and a solvent. The solvent includes a compound that includes a ketonic carbonyl group and an alcoholic hydroxyl group. The alcoholic hydroxyl group is preferably a tertiary alcoholic hydroxyl group. The solvent preferably further includes an alkylene glycol monoalkyl ether carboxylate. | ||
| 申请公布号 | US9146466(B2) | 申请公布日期 | 2015.09.29 |
| 申请号 | US201414247449 | 申请日期 | 2014.04.08 |
| 申请人 | JSR CORPORATION | 发明人 | Asano Yusuke;Nakamura Shin-ichi;Futai Tomonori |
| 分类号 | G03F7/039;G03F7/004;G03F7/038 | 主分类号 | G03F7/039 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A resist composition comprising: a polymer that comprises: an acid-labile group-containing structural unit; anda structural unit that comprises a lactone structure, a cyclic carbonate structure, a sultone structure, or a combination thereof, a photoacid generator; and a solvent comprising: a compound comprising a ketonic carbonyl group and an alcoholic hydroxyl group; andan alkylene glycol monoalkyl ether carboxylate, a content of the compound in the solvent being from 7 mass % to 35 mass %. | ||
| 地址 | Tokyo JP | ||